Abstract
The evolution of surface morphologies during epitaxial germanium growth on silicon substrate by thermal chemical vapor deposition is discussed. When the growth is reaction rate limited, the germanium surface exhibits a thickness-dependent morphology. After a certain thickness of germanium is grown, a distinctive surface protrusion feature is observed. Analysis by transmission electron microscopy shows that the formation of these protrusion features is correlated with the development of in-film defects in germanium that originate from the lattice mismatch between germanium and silicon.
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