Abstract
Although advances in heteroatom incorporation into the single-layer graphene lattice resulted in films with large carrier densities, careful characterization by Raman spectroscopy is important for assessment of the material’s quality. We investigated theoretically I(D)/I(D′) Raman intensity ratios induced by B- and N- substitutional doping, demonstrated to be consistent with measurements. Calculated Fermi level shifts showed that for a moderate doping density results are comparable to electrolyte gating, while analytical analysis of the electron-defect scattering provided insight into changes of cross-sections. Effects of doping density on the D band intensity and broadening were quantified, and will assist in graphene characterization.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
