Electromagnetic Susceptibility of Semiconductor Junction Igniter With Different Doping Density

Abstract

The fabrication and radio frequency (RF) protection ability of semiconductor junction igniter (SJI) is presented. The SJI consists of two back-to-back PN junctions, with a predesigned size, which is designed to protect against the RF and electrostatic discharge events. The effect of doping density on electromagnetic susceptibility of SJI is studied by two kinds of SJI. In addition, SJI under different electromagnetic environments are tested, which are based on radiation and conductive coupling modes. For the radiated excitation, SJI with different doping density are tested by gigahertz transverse electromagnetic cell experiment ranging from 10 MHz to 1 GHz. The results show that the resonance frequency agrees with the resonance principle of antenna design. The best coupling frequency is 300 MHz and both types of SJI are not fired for the electric field strength of 500 V/m. For the excitation of directly injecting RF energy, both types of SJI are tested by RF sensitivity testing. Based on the Langlie method, the RF no-fired level is calculated. According to the results, we consider the SJI will become inert by increasing the doping density of n -type silicon. Furthermore, we conclude that there is little correlation between two kinds of coupling modes.