Abstract
Defect-impurity interaction in Si (n-type and intrinsic) has been studied by means of the perturbed γ-γ angular correlation technique (PAC). The trapping of defects at implanted radioactive impurity atoms (111In) between 740 and 1000 K was confirmed after postimplantation (P, Au) and studied as a function of the implantation dose. After P-implantation at 295 K a new unique defect configuration was observed characterized by νQ = 447 MHz, η = 0 stable below 450 K.
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