Abstract

The defect generation rate (P/sub g/) during constant voltage stress is investigated by using short-time voltage pulses over large fluence range. It is found that P/sub g/ is not constant as a function of injected charge and the voltage acceleration of P/sub g/ in the linear defect generation regime is similar to that of the reciprocal of Q/sub BD/. The change of carrier capture cross (/spl sigma/) during defect generation was speculated as one of the reasons responsible for the change of the P/sub g/ value with injected charge. However, from this preliminary report, we have determined that the change of P/sub g/ can not be explained by a change of /spl sigma/.

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