Abstract
A method has been developed for determination of ion induced displacement threshold energies and defect production rates. Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) are used to measure the damage induced by a 40–150 eV Ne + ion beam at low ion doses (< 2×10 15 ions/cm 2) on a graphite sample. The threshold energy for defect production in graphite is found to be E d = 35.8 ± 1 eV and the defect production rate varies from 0–4.7 defects/ion over the range of 35–150 eV Ne +.
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