Abstract
(111)B CdTe films and (111)B and (112)B HgCdTe films were grown by MBE. The films were examined by optical and transmission electron microscopy. Formation of the microtwins and dislocations was observed in the films. The HgCdTe films contained some complicated defects also. The interaction of partial dislocations in the twinning plane results in the creation of threading dislocations. The increase of twin boundary density leads to an increase of the threading dislocation density in CdTe (111)B films. The existence of the elemental tellurium phase is possible during Hg 0.8Cd 0.2Te film growth by MBE. This circumstance in combination with the twinning process leads to the avalanche-type multiplication of the structure defects.
Published Version
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