Abstract
Abstract The present status of films of CdTe and HgCdTe grown by molecular beam epitaxy (MBE), in relation to IR applications, is reviewed. The strengths of the MBE approach include excellent uniformity, “bulk-like” Hall properties and sharp interface control. However, the growth method is complex, doping is difficult to control and the high mercury flux needed creates problems in transitioning to manufacture. Preliminary results on ion beam sputtering are described, and the suitability of this technique for addressing the limitations of MBE is discussed.
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