Abstract
Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300nm silicon layers were implanted with Si+ ions with energies in the range from 180 up to 230keV with fluences in the range from 1014 up to 5×1015cm−2 at 0°C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing.It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.
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