Abstract
Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found that the noble gas atoms implanted into silicon layers take an active part in the processes of interaction with radiation damage. Data on the temperature stability of luminescence centres are given. The residual compressive stress in SOS films is estimated using the photoluminescence method.
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