Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy

Abstract

Current transient spectroscopy (CTS) using high relaxation voltages up to 1 kV is shown to be an effective tool for non-destructive characterization of radiation defect profiles in silicon resulting from the MeV ion irradiation. The method was used for profiling of different defect centers produced in low-doped, float zone, n-type silicon by irradiation with 3, 4 and 5.3 MeV protons to a fluence of 5×10 9 and 1×10 10cm −2. The results were compared with those obtained from capacitance DLTS and reverse I– V profiling. Electronic properties and introduction rates of dominant defect centers were also established. It is shown that CTS is capable to trace full-depth profiles of dominant radiation defects and provide precise and more accurate data than previously presented by destructive profiling procedures. Measured distributions of vacancy related radiation defects agree well with the distribution of the primary damage received from Monte Carlo simulations with the exception of the peak broadening attributed to vacancy diffusion.