Radiation defect distribution in silicon irradiated with 600 keV electrons

Abstract

Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2×10 13 to 1×10 15 cm −2. Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods – the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy.