Abstract
Abstract New realizations of memory effects linked with defect density waves have been established by X-ray investigations of Ag3AsS3, SC(NH2)2, and TMAZnCl4 crystals. They involve the presence of additional wave modulation with temperature independent wave vector, interference of the normal and additional waves, the presence of the new intermediate state in the temperature region of two-phase state, the reverse hysteresis at the N<->IC phase transition.
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