Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy

Abstract

The subgap optical absorption of GaAs layers grown by low temperature molecular beam epitaxy is measured by photothermal deflection spectroscopy (PDS). The absorption increases as the growth temperature decreases at a fixed wavelength. Defect densities evaluated from the absorption spectra and the known absorption cross sections are between 1018 and 1019 cm−3. It is shown that complementary PDS phase spectra can be used to separate the absorption of the epitaxial layers from the bulk.