Abstract
Abstract In the next nearest surface region the vacancy concentration is constant and independent of the irradiation temperature between 750 and 300°C and decreases with increasing electron flux. The conentrations of interstitials and of vacancies in the sink-free bulk of the material are equal and depend on the irradiation temperature, and are almost independent of the irradiation flux. The activation migration energies of vacancies and of interstitials decrease with increasing irradiation flux.It is further shown that the dynamic steady state defect concentrations resulting from the rate equations are artificial concentrations, which will not be achieved in finite times.
Published Version
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