Abstract
This presentation will discuss recent studies on the fabrication and characterization of b-Ga2O3 containing Ge donors or N acceptors. A plasma source was used to dope Ga2O3 nanowires with N by exploiting their nanoscale cross sections, while bulk crystals were uniformly doped with Ge by neutron irradiation. The dopant incorporation was confirmed by chemical analyses. We find defect-related luminescence is strongly enhanced in N-doped Ga2O3, which likely originates from defect compensation effects. With Ge doping, both the UV band due to self-trapped holes (STHs) and defect-related emission increase following neutron irradiation, suggesting STHs being localized close to a defect site.
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