Abstract
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In B+- and As+-implanted Si substrates, paraboli-type distributions of vacancy-type defects were observed. In Si+-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si+-implanted GaAs above the temperature of 900°C.
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