Abstract
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In the Si+-implanted GaAs, the concentration of vacancy-type defects decreased monotonically with increasing depth below the surface. In B+- and As+-implanted Si substrates, parabolic-type distributions of vacancy-type defects were observed. The present work demonstrates that the monoenergetic positron technique is a very powerful tool for the study of vacancy-type defects near surfaces in semiconductor processes.
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