Abstract
Significant increases in thermal generation rates in molecular-beam epitaxy (MBE)-grown p-i-n-i-p GaAs structures are attributed to depassivation of hydrogen-defect/impurity complexes during high-intensity, low-energy electron-beam irradiation. Quantum calculations of relevant defect energy levels and reaction pathways suggest that depassivation of oxygen impurities is the likely cause of the observed degradation. Electric-field and excess-carrier-induced dehydrogenation of O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">As</sub> -H complexes is identified as a likely rate-limiting process, leading to the observed enhanced thermal carrier generation in these structures.
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