Abstract
Bismuth silicon oxide (BSO—Bi 12SiO 20) crystals were grown by Czochralski technique employing both resistive and inductive heating systems. The effect of rotation rate, pulling rate and melt level in crucible is discussed. The growth conditions were optimized to achieve core-free crystals with minimum incorporation of bubbles into the crystals. The morphology of the crystals was analysed with respect to the growth parameters employed. Doped crystals were grown with 0.1 mol% of group III elements (B, Al and Ga). Chemical etching studies showed that the etch pit densities vary with different dopants. The optical transparency indicated varying absorption edges for different dopants. The results obtained from dielectric studies are presented. Hardness of these crystals vary with different dopants. Based on these results, the defect nature in the crystal is analyzed.
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