Abstract
In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN‐based deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) is proposed and numerically investigated using SimuLED software. By step‐increasing the thickness of the quantum wells and step‐decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV‐LED at 20 mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.
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