Deep-Level Traps’ Capture Time Constant and its Impact on Nonlinear GaN HEMT Modeling

Abstract

Deep-level traps’ capture and emission time constants are known to impact the GaN HEMT models' ability to reproduce the device behavior when subject to RF modulated signals. Since deep level traps' capture time constants are usually much shorter than current pulse duration, they are usually neglected as assumed infinitesimally short. This work demonstrates, through basic semiconductor physics and experimental results, that such an assumption may not be verified, therefore justifying the effort of modeling such time constants as they may fall within the low-frequency components of modern communication signals.