Abstract
Deep-level transient current spectroscopy (DLTCS) as an alternative of the well-known DLTS capacitive method is suggested to analyse electronic relaxation phenomena in metal-insulator-semiconductor (MIS) structures. The DLTCS spectra of Al-SiO2-Si diodes are compared with those obtained using the thermal dielectric relaxation current (TDRC) technique. Attempts are presented to estimate the interface states density distribution throughout the band-gap of the semiconductor.
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