Abstract
We present a simple method of deep anisotropic etching of silicon up to 400 μm with nearly vertical sidewall profile for thermopile devices. The method is based on the time-multiplexed etching which is a modified case of the Bosch deep reactive ion etching process. This process is mainly adjusted by chuck power and it is divided into three steps which are zero bias deposition step, high bias polymer removing step, and low bias silicon etching step. Compared with the standard Bosch process, this modified strategy shows advantage of etch rate and selectivity.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
