Abstract
A one‐dimensional analytical solution is derived for melt propagation in silicon wafers uniformly heated with lamp radiation from one side and radiatively cooled from both sides. Only the case of deep melting is considered, beyond the power threshold required for elimination of all solid inclusions at the irradiated surface. The solutions for bulk silicon and for silicon with a buried oxide layer are in reasonable agreement with the experimental data. The results are relevant to formation of single crystalline silicon films on by crystallization from the melt.
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