Abstract
Near-surface damage introduced during fabrication of Schottky barrier diodes (SBDs) by electron-beam (E-beam) deposition of various metals on n-type silicon has been investigated using deep level transient spectroscopy. The main defect was observed at Ec −0.42 eV and is annealed out at 400 °C. The interaction of E-beam deposition induced defects with defects which had been introduced in the substrate by irradiation with high-energy electrons was also observed in Pd and Pd/Au SBDs. Therefore erroneous conclusions can be made when using SBDs fabricated by E-beam deposition to characterize defects introduced by some other process near the interface of a SBD.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
