Abstract
Four deep electron-trap levels were detected by DLTS from the non-doped and Te- or S-doped LEC-grown GaP. Some discussions are given regarding their origin. The density Nt of these levels increased linearly with the net donor density ND for non-doped samples. Nt was reduced by doping Te with ND∼1017 cm-3, and then increased as ND1.7 for ND>1017 cm-3.
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