Abstract
The deep levels in Hg0.766Cd0.234Te grown on Si substrates by metal-organic chemical vapor deposition (MOCVD) have been studied. Spectral analysis of deep level transient spectroscopy (SADLTS) was used to evaluate the deep levels for this device. Three levels (LM1, LM2 and LM3) were confirmed in this device. The values of activation energy and capture cross section for these levels were as follows: LM1 (21 meV, 6.1×10-18 cm-2), LM2 (21 meV, 1.3×10-18 cm-2) and LM3 (35 meV, 9.8×10-18 cm-2). The midgap level in p-HgCdTe reported by several authors could not be confirmed in this work.
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