Abstract
Two deep electron traps induced by lattice mismatch in relaxed GaAs1−xSbx layers (x=0% to 3%) grown by liquid phase epitaxy (LPE) on GaAs substrates have been revealed by means of deep-level transient spectroscopy. One of the traps, that shows nonstandard, logarithmic capture kinetics and whose energy level is tied to the valence-band edge, has been related to electron states associated with α dislocations. The other trap has been attributed to the EL2 defect and possible reasons of its unexpected formation in the LPE-grown layers are briefly discussed.
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