Abstract
We have utilized the isothermal capacitance transient spectroscopy and modulated function waveform analysis to investigate the deep levels and DX centers in molecular beam epitaxially grown AlxGa1−xAs/GaAs Schottky diodes deposited on n+ GaAs, with Al composition ranging from x=0 to 0.5, and implanted with Si. In the concentration range x=0.19 to 0.50, two major electron trap levels (E1 and E2) were detected, which gradually changed with composition. For example, E1 changed from 0.393 to 0.339 eV and E2 changed from 0.136 to 0.287 eV. However, in pure GaAs, three major trap levels with energy E1 (hole)=0.226 eV, E2 (electron)=0.496 eV, and E3 (EL2)=0.74 eV were observed. Apparently, these levels are governed by the deep levels known as DX centers.
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