Abstract
Photoluminescence (PL) spectroscopy from 10K up to 300K was performed on ∼50Å and ∼120Å GaAs/AlGaAs multiple quantum wells (MQWs) grown on on-axis and off-axis GaAs substrates. An anomalous quenching of the integrated PL in the 80–200K region was observed for the on-axis substrate-grown samples. X-Ray diffractometry (XRD) showed no significant structural difference between the on- and off-axis samples. Deep-Level Transient Spectroscopy revealed more defects for the on-axis layers. The growth of ∼50Ǻ MQW on-axis layers appears to be more susceptible to defect formation. The observed PL quenching is attributed to the presence of these traps.
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