Abstract
We report the application of Deep Level Transient Spectroscopy (DLTS) in Hg1-xCdxTe, demonstrating for the first time the utilization of DLTS techniques in a narrow band-gap semiconductor, Eg < 0.40 eV. DLTS measurements performed on an n+-p diode with Eg (x=0.21, T=30 K) =0.096 eV have identified an electron trap with an energy of Ev + 0.043 eV and a hole trap at Ev + 0.035 eV. Measurements of trap densities, capture cross sections, and the close proximity of the electron and hole trap locations within the band-gap suggest that DLTS may be observing both the electron and hole capture at a single Shockley-Read recombination center. The trapping parameters measured by DLTS predict minority carrier lifetime versus temperature data to be comparable with the experimentally measured values.
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