Abstract
Deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) are used to study europium implanted gallium nitride layers. The implantation was realised at room temperature in the random and channeled geometries. From DLTS, we determine intrinsic defects with associated levels located in the band gap (below the conduction band). Besides, we point out a new electron trap named Eu2. Its associated level is located at about Ec –0.36 eV and the defect is probably related to the europium rare-earth ion. TEM investigation shows a difference in structure caused by changing the geometry of implantation. The random implanted sample contains numerous planar defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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