Abstract
Deep Level Transient Spectroscopy (DLTS) and Optical Deep Level Transient Spectroscopy (ODLTS) experiments have been conducted on a series of In-doped CdTe crystals grown by the Bridgman or the travelling heater (THM) methods using Te as the solvent. The THM samples are n-type but strongly compensated. Annealing at 700°C under high Cd vapour pressure leads to a decompensation of the crystals. The electron concentration is then a measure of the donor (In) concentration, which was in the range 3 × 10 16−1.5 × 10 18cm −3. Six and eight electron traps are, respectively detected in the non-annealed and annealed samples at a concentration level 10 2–10 3 times below the net electron concentration. They cover the energy range 0.2–0.8 eV. Similar traps are found in both types of crystals, the concentration of which increases with In content and after annealing. The presence of In interstitial-type defects is suggested. A main hole trap at 0.12eV is detected by ODLTS in compensated samples with a concentration close to the donor concentration. Low temperature electrical measurements show that this trap is ionized under equilibrium conditions. It appears to be the main compensating acceptor centre. A plausible microscopic structure is In cdV cd. This study shows that In-doped CdTe grown by THM is electrically compensated and that In-containing neutral associates or precipitates play a minor role in the compensation mechanism.
Published Version
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