Abstract
The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS profiles for the EL1 centre, but good agreement was obtained using an optically pumped method. A hole trap located at 0.34 eV above the valence, and thought to be associated with the 4+ charge state of Cr, matched the atomic Cr concentration to within a factor of two. It was found that for high temperature diffusions ( m ̃ 1000°C ) most of the Cr atoms act as deep acceptor centres.
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