Deep-level photoluminescence of doped CdTe in the 0.8 eV region

Abstract

Photoluminescence studies of CdTe:Cu:Cl in the 0.8 eV region were carried out with respect to the influence of partial vapor pressure of Cd or Te. Two PL bands were detected with peak energies 0.72 eV and 0.81 eV. The intensity of both bands abruptly diminishes at high partial pressures of Cd and Te. According to the proposed model these bands are due to close DA pairs and one of them may be related to a portion of the hexagonal phase in the cubic lattice of CdTe.