Abstract
A new technique called deep-lebel Fourier spectroscopy (DLFS), is proposed. This is an efficient and convenient method for evaluating deep livels in semiconductors. The technique is presented with a frequency space analysis for the case of exponential capacitance transients. Taking the Fourier transforms of the transient capacitance values, the deep level emission rate is determined in sequence from various numerical calculations of the Fourier coefficients. This method makes it possible to analyze the deep level accurately and automatically without judgements of the peaks in the spectra. Computer simulation and experiments using the method for a p-type Si Schottky diode are demonstrated. Finally, a comparison is made with the DLTS method.
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