Deep-level defects in high-voltage AlGaAs p–i–n diodes and the effect of these defects on the temperature dependence of the minority carrier lifetime

Abstract

The variation of the effective lifetime of minority carrier lifetime τeff with temperature has been studied in the temperature range 300–580 K in AlxGa1−xAs base regions of p+–p0–i–n0–n+ high-voltage GaAs–AlGaAs diodes grown by liquid-phase epitaxy. It was found by using deep level transient spectroscopy that the emission/capture of electrons and holes in AlxGa1−xAs p0–i–n0 epitaxial layers is governed by the DX− states of the DX center formed by Se/Te background impurities. The Arrhenius plots associated with the τeff were used to determine the activation energy of the hole capture to the DX− level to be Ec = 159 meV. It is shown that the thermal capture of holes to the DX− level determines the relaxation time of nonequilibrium carriers in the AlxGa1−xAs base layers as well as its temperature dependence.