Abstract
The properties of deep electron trapping centers of Te-doped (AlxGa1-x)0.5In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165±0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)0.5In0.5P (x=0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)0.5In0.5P.
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