Abstract
GaSb single crystals codoped with tellurium and sulphur were studied by capacitance transient methods. The tellurium doping allowed us to have the free carrier concentration about ten times higher than the sulphur one and in this manner to ensure appropriate conditions for measurement of the sulphur-related deep donor (DX-like level). Emission and capture barriers were determined; the value of the former was found to be different from that measured on GaSb:S samples. The shape of the transients was examined and described by the Gaussian broadening of the barrier energy. The emission transients were discovered to be nearly exponential (Gaussian broadening energy meV) while the capture process was strongly non-exponential ( meV). The non-exponentiality was explained by a spatial variation of the capture barrier due to the fluctuating potential of the shallow charged impurities.
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