Abstract
The increasing interest in electronics specifically designed to control quantum processors is currently driven by the quest for large-scale quantum computing. A promising approach is emerging based on the use of CMOS devices operating at deep-cryogenic temperatures, and several essential components have been demonstrated to operate at such temperatures, from basic MOSFETs to field-programmable gate arrays. In this letter, we show, for the first time, a voltage reference in a standard CMOS technology that can guarantee a stable voltage over a wide range of temperatures from 300 K down to deep-cryogenic temperatures. By exploiting CMOS transistors in dynamic-threshold MOS configuration, the proposed reference occupies only 445 $\mu \text{m}^{2}$ in a standard 40-nm CMOS process, while showing a temperature coefficient below 0.8 mV/K over the temperature range from 4 to 300 K. These results demonstrate the feasibility of wide-range cryogenic voltage references to enable future cryogenic applications.
Highlights
INTRODUCTIONQuantum computers promise an exponential speed-up over classical computers, thanks to the exploitation of fundamental properties of quantum systems, such as superposition and entanglement [1]
Quantum computers promise an exponential speed-up over classical computers, thanks to the exploitation of fundamental properties of quantum systems, such as superposition and entanglement [1]. They require large-scale control electronics to properly operate, but, since the quantum processor typically operates at deep-cryogenic temperatures, several researchers have proposed to operate this electronic control interface at cryogenic temperatures [2]–[4]
Bandgap references in CMOS technology have employed parasitic bipolar transistors, since they are preferred for their lower process spread [8]
Summary
Quantum computers promise an exponential speed-up over classical computers, thanks to the exploitation of fundamental properties of quantum systems, such as superposition and entanglement [1]. To validate these findings, a complete reference circuit, including the core devices and biasing electronics, has been designed and characterized down to 4 K (Section III), unlike our prior work [10] focusing only on the core devices and not demonstrating a full circuit.
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