Abstract
We present the first results of development of high-power field-effect transistors (FETs) based on a GaAs heterostructure with quantum well and additional potential barriers optimized to reduce the role of transverse spatial electron transport, which leads to a 1.5-fold increase in the output power. The proposed FETs with a gate length of 0.4–0.5 μm and a total gate width of 0.8 mm exhibit a gain above 8 dB at a frequency of 10 GHz, a specific output power above 1.4 W/mm, and an up to 50% power added efficiency.
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