Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

Abstract

We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce transverse spatial electron transport and enhance quantum confinement. The transistors yield a doubled output power at a trapezoidal gate length of 0.4–0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz in the continuous mode of operation. The gain exceeds 9.5 dB at a specific output power above 1.6 W/mm and a power-added efficiency of up to 50%. Prospects for the development of such devices are presented.