Abstract
Continuous repeated gate sweeping incorporated with substrate etching step is utilized to decrease the OFF state current in carbon nanotube field effect transistor (CNT-FET) devices with bundled carbon nanotubes. In particular, the effects of continuous repeated gate sweeping on transfer characteristics of CNT-FETs are examined. The etching step creates suspension in CNT-FETs at the contacts with metal electrodes as well as makes metallic CNTs dramatically burnt off by electrical current. By repeating sweeping, source-drain current gets lower and lower. This will eventually lead to the OFF state current less than 2 nA. Defects in the lattice of CNTs introduced by multiple gate sweeping could be the reason for this phenomenon. Contribution from possible force of electric field is also considered.
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