Abstract
Decrease of FET threshold voltage due to boron depletion during thermal oxidation : G. Schottky. Solid St. Electron.14 (1971), p. 467
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
https://doi.org/10.1016/0026-2714(72)90661-0
Copy DOIJournal: Microelectronics and Reliability | Publication Date: Apr 1, 1972 |
Decrease of FET threshold voltage due to boron depletion during thermal oxidation : G. Schottky. Solid St. Electron.14 (1971), p. 467
Join us for a 30 min session where you can share your feedback and ask us any queries you have