Abstract
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental spectra. The up – and down- spin roles are considered for studying the nano structural properties of bulk, interface and surface states of ultra thin film, down to 2 nm and also appealing to the field of surface science. The obtained results show the above states can be determined and distinguished with spin orientations in FitXPS method.
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