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https://doi.org/10.1016/0038-1101(91)90058-7
Journal: Solid State Electronics | Publication Date: Nov 1, 1991 |
Citations: 7 |
Abstract Measurements of the time dependence of the decay of open-circuit photovoltage in Si p-n junction diodes after flash illumination have shown an unexpected power-law time-dependence of the trapped charge density extending over times of hundreds of seconds. This behaviour is consistent with earlier findings of the decay of luminescence in phosphors which also depends on the rate of emission of electrons from traps. A discussion is given of some of the basic processes which may be responsible for the behaviour which is inconsistent with any of the accepted theories.
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