Abstract
AbstractIn this paper, simple relations are proposed for the calculation of Debye temperature θD and melting point Tmof II‐VI and III‐V zincblende semiconductors. Six relations are proposed to calculate the value of θD. Out of these six relations, two are based on plasmon energy data and the others on molecular weight, melting point, ionicity and energy gap. Three simple relations are proposed to calculate the value of Tm. They are based on plasmon energy, molecular weight and ionicity of the semiconductors. The average percentage deviation of all nine equations was calculated. In all cases, except one, it was estimated between 3.34 to 17.42 % for θD and between 2.37 to 10.45 % for Tm. However, in earlier correlations, it was reported between 10.59 to 33.38% for θD and 6.96 to 14.95% for Tm. The lower percentage deviation shows a significant improvement over the empirical relations proposed by earlier workers. The calculated values of θD and Tm from all equations are in good agreement with the available experimental values and the values reported by different workers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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