Structural properties of binary semiconductors

Abstract

Using the plasma oscillations theory of solids, 2 empirical relations have been proposed for the calculation of the structural properties such as bond-stretching central force constant (α) and bond-bending non-central force constant (β) for II-VI and III-V group binary semiconductors. We find that α =D (N›ωp) 2 and β = S (N›ωp) 2, where D and S are constants. The numerical values of D and S are respectively, 0.151 and 0.016 for II-VI and 0.177 and 0.031 for III-V group binary semiconductors. The structural properties of binary semiconductors exhibit a linear relationship when plotted on a log-log scale against the plasmon energy N›ωp (in eV), which lies on the straight lines. We have applied the proposed empirical relations on these binary semiconductors and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers. Key words: Plasmon energy, structural properties, III-V and II-VI Semiconductors.