Abstract
We report on high-field ( H<38 T) magnetoresistance and Hall effect measurements of initially dielectric Pb 0.75Sn 0.25Te(In). The data taken at 4.2 K show a magnetoresistance increase in time (localization) for a relatively low concentration of nonequilibrium electrons n. For a higher level of photoexcitation the localization disappears, and the Hall effect measurements, on the contrary, reveal an increase of n with field. The localization is attributed to energy band modulation. The delocalization is discussed in terms of field-induced electron transitions between the metastable local and extended states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.